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| NTE2594 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Pulsed (PW 300s, Duty Cycle 10%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.2A VCE = 5V, IC = 6A Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage VCE = 10V, IC = 1.2A VCB = 10V, f = 1MHz IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A Min - - 15 8 - - - - 800 500 7 Typ - - - - 18 160 - - - - - Max Unit 10 10 50 - - - 1.0 1.5 - - - MHz pF V V V V V A A V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0 Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol Test Conditions Min 500 - - - Typ - - - - Max Unit - 0.5 3.0 0.3 V s s s VCEX(sus) IC = 5A, IB1 = IB2 = 2A, L = 500H, Clamped ton tstg tf 5IB1 = -2.5IB2 = IC = 7A, VCC = 200V, RL = 28.6 .221 (5.6) .123 (3.1) .134 (3.4) Dia .630 (16.0) .315 (8.0) C .866 (22.0) B C E .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0) |
Price & Availability of NTE2594
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